High Purity Anti Corrosion Quartz Cathode With Frosted Surface Custom Size

Product Name: High Purity Frosted Quartz Cathode with High Temperature and Corrosion Resistance
Dimension: 95mm*91mm*44.5mm

Integrally processed from high-purity quartz with fine single/double-sided frosting. It features high temperature resistance, strong corrosion resistance, zero metal precipitation, excellent insulation and uniform diffuse light transmission. Widely used in coating, vacuum sputtering, electrochemistry, laboratory plasma and semiconductor optoelectronic processes:

Laboratory Chemistry and Electrochemistry

Cathode fitting for plasma reaction chambers: Insulating cathode base inside vacuum plasma cleaning and ion etching equipment. Frosted surface evenly disperses plasma beam to improve reaction uniformity.

Carrier for corrosive electrochemical tests: Insulating support for electrolysis experiments with acid, alkali and fluorine-containing electrolyte, isolating impurities from metal electrodes to prevent electrolyte contamination.

Semiconductor and PV Microelectronics (Core Application)

Quartz cathode support for sputtering and PVD coating: Supports metal targets and wafer substrates. Frosted surface weakens local arc discharge to stabilize coating uniformity. High-purity material avoids metal ion precipitation and film defects.

Insulating cathode components in vacuum chambers for optoelectronic chip and thin-film device manufacturing, matching ultra-clean electronic manufacturing standards.

New Materials and Thin-Film Fine Chemicals

Cathode support jig for functional film and nano-coating deposition, non-deformable and pollution-free under high-temperature vacuum conditions.

Insulating base of plasma reaction tanks for lithium battery conductive film and catalytic film preparation, resistant to corrosive vapor from precursors.

Vacuum Optoelectronic Special Testing Conditions

Cathode base matched with UV plasma light sources; frosted quartz diffuses UV light evenly to stabilize light output.

Continuous operation at 200~1100℃ under vacuum, suitable for high-temperature ion activation and high-temperature vapor deposition processes.